LOGO
LOGO
IRG4IBC30KDPBF Image

img for reference only

Mfr. #:
IRG4IBC30KDPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT, max. 600 V, max. 17 A
Datasheet:
In Stock:
999995
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 17 A
Maximum collector-emitter voltage 600 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 45 W
Package type TO-220FP
Configuration -
Mounting type Through hole
Channel type N
Number of pins 3
Switching speed 8 → 30kHz
Transistor configuration Single
Dimensions 10.75 x 4.83 x 16.13mm
Related models
  • IRLR2908TRPBF

    Power MOSFET, N-Channel, 80 V, 30 A, 0.0225 ohm, TO-252AA, Surface Mount

  • BSZ065N03LSATMA1

    Power MOSFET, N-Channel, 30 V, 40 A, 0.0054 ohm, TSDSON, Surface Mount

  • IRFH7085TRPBF

    Power MOSFET, N-Channel, 60 V, 100 A, 0.0026 ohm, QFN, Surface Mount

  • IPD180N10N3GATMA1

    Power MOSFET, N-Channel, 100 V, 43 A, 0.0147 ohm, TO-252 (DPAK), Surface Mount

  • IPD100N04S402ATMA1

    Power MOSFET, N-Channel, 40 V, 100 A, 0.0017 ohm, TO-252 (DPAK), Surface Mount

  • IPG20N04S4L08ATMA1

    Dual MOSFET, N-Channel, 40 V, 20 A, 0.0072 ohm, TDSON, Surface Mount

  • SPB21N50C3ATMA1

    Power MOSFET, N-Channel, 500 V, 21 A, 0.16 ohm, TO-263 (D2PAK), Surface Mount

  • BSZ900N20NS3GATMA1

    Power MOSFET, N-Channel, 200 V, 15.2 A, 0.077 ohm, TSDSON, Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd