LOGO
LOGO
IRFP4332PBF Image

img for reference only

Mfr. #:
IRFP4332PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, HEXFET series, MOSFET, NMOS, TO-247AC package
Datasheet:
In Stock:
2
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 57 A
Maximum drain-source voltage 250 V
Package type TO-247AC
Maximum drain-source resistance 33 mΩ
Mounting type Through hole
Number of pins 3
Maximum gate-source voltage -30 V, 30 V
Channel mode Enhancement
Maximum gate threshold voltage 5 V
Minimum gate threshold voltage 3 V
Maximum power dissipation 360 W
Transistor configuration Single
Category -
Related models
  • FP15R06W1E3_B11

    Infineon IGBT Module N-channel, Common Collector, 22 A, Vce=600 V, 23-pin EASY1B package

  • FF200R12KS4HOSA1

    Infineon IGBT module, max 1200 V, max 275 A

  • BAL99E6327HTSA1

    Infineon single switching diode, Iout=250mA, SMD mount, Vrev=80V, SOT-23 package

  • IDW80C65D2XKSA1

    Infineon single diode, Iout=80A, through hole mounting, Vrev=650V, TO-247 package

  • IDW80C65D1XKSA1

    Infineon single diode, Iout=80A, through hole mounting, Vrev=650V, TO-247 package

  • FS450R12OE4BOSA1

    Infineon IGBT module, max 1200 V, max 450 A

  • IRG4BC40W-LPBF

    Infineon IGBT, max. 600 V, max. 40 A

  • FP75R07N2E4B11BOSA1

    Infineon IGBT Module N-channel, 3-phase bridge, 75 A, Vce=650 V, 31-pin ECONO2 package

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd