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IRFB4332PBF Image

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Mfr. #:
IRFB4332PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, HEXFET series, MOSFET, NMOS, TO-220AB package
Datasheet:
In Stock:
1
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 60 A
Maximum drain-source voltage 250 V
Package type TO-220AB
Maximum drain-source resistance 33 mΩ
Mounting type Through hole
Number of pins 3
Maximum gate-source voltage -30 V, 30 V
Channel mode Enhancement
Maximum gate threshold voltage 5 V
Minimum gate threshold voltage 3 V
Maximum power dissipation 390 W
Transistor configuration Single
Category -
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