LOGO
LOGO
BSZ097N04LSGATMA1 Image

img for reference only

Mfr. #:
BSZ097N04LSGATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, OptiMOS 3 series, MOSFET, NMOS, TSDSON package
Datasheet:
In Stock:
5000
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 40 A
Maximum drain-source voltage 40 V
Package type TSDSON
Maximum drain-source resistance 14.2 mΩ
Mounting type Surface mount
Number of pins 8
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage 2 V
Minimum gate threshold voltage 1.2 V
Maximum power dissipation 35 W
Transistor configuration Single
Category -
Related models
  • IKFW50N65DH5XKSA1

    IGBT Trench 650 V 59 A 124 W Through Hole PG-HSIP247-3-2

  • IGZ75N65H5XKSA1

    IGBT Trench 650 V 119 A 395 W Through Hole PG-TO247-4

  • IGW50N65H5AXKSA1

    IGBT Trench 650 V 80 A 270 W Through Hole PG-TO247-3

  • CY23EP05SXC-1H

    Fanout Buffer (Distribution), Zero Delay Buffer IC 200MHz, 220MHz 1 8-SOIC (0.154", 3.90mm Width)

  • SGW30N60FKSA1

    IGBT NPT 600 V 41 A 250 W Through hole PG-TO247-3-1

  • AUIRGP4062D1

    IGBT Trench 600 V 55 A 217 W Through Hole TO-247AC

  • CY23EP05SXC-1HT

    Fanout Buffer (Distribution), Zero Delay Buffer IC 200MHz, 220MHz 1 8-SOIC (0.154", 3.90mm Width)

  • AUIRGP4062D1-E

    IGBT Trench 600 V 55 A 217 W Through Hole TO-247AD

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd