LOGO
LOGO
IRF7832TRPBF Image

img for reference only

Mfr. #:
IRF7832TRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, HEXFET series, MOSFET, NMOS, SOIC package
Datasheet:
In Stock:
10
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 20 A
Maximum drain-source voltage 30 V
Package type SOIC
Maximum drain-source resistance 4.8 mΩ
Mounting type Surface mount
Number of pins 8
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage 2.32 V
Minimum gate threshold voltage 1.39 V
Maximum power dissipation 2.5 W
Transistor configuration Single
Category -
Related models
  • IRFP4127PBF

    Transistor: N-MOSFET; unipolar; 200V; 53A; 341W; TO247AC

  • IRFP4137PBF

    Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO247AC

  • IRFP4227PBF

    Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC

  • IRFP4229PBF

    Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC

  • IRFP4310ZPBF

    Transistor: N-MOSFET; unipolar; 100V; 134A; 280W; TO247AC

  • IRFP4321PBF

    Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC

  • IRFP4332PBF

    Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC

  • IRFP4368PBF

    Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd