LOGO
LOGO
IPD90P03P4L04ATMA1 Image

img for reference only

Mfr. #:
IPD90P03P4L04ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, OptiMOS P series, MOSFET, PMOS, DPAK (TO-252) package
Datasheet:
In Stock:
5
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type P
Maximum continuous drain current 90 A
Maximum drain-source voltage 30 V
Package type DPAK (TO-252)
Maximum drain-source resistance 6.8 mΩ
Mounting type Surface mount
Number of pins 3
Maximum gate-source voltage -16 V, 5 V
Channel mode Enhancement
Maximum gate threshold voltage 2 V
Minimum gate threshold voltage 1 V
Maximum power dissipation 137 W
Transistor configuration Single
Category -
Related models
  • KP229E3518XTMA1

    Pressure Sensor 7.25 PSI ~ 58.02 PSI (50 kPa ~ 400 kPa) Absolute

  • KP229IGE3518XTMA1

    PRESSURE SENSORS

  • IRFR024NTRPBF

    Single N-Channel 55 V 0.075 Ohm 20nC HEXFET? Power Mosfet - TO-252AA

  • IRLML2803TRPBF

    Single N-Channel 30 V 0.4 Ohm 5 nC HEXFET? Power Mosfet - MICRO-3

  • IRFS7434TRL7PP

    N Channel 40 V 1 mΩ 210 nC Surface Mount HEXFET Power Mosfet -D2PAK-7

  • IRLML6302TRPBF

    Single P-Channel 20 V 0.6 Ohm 2.4 nC HEXFET? Power Mosfet - MICRO-3

  • IRLML5103TRPBF

    Single P-Channel 30 V 1 Ohm 5.1 nC HEXFET? Power Mosfet - SOT-23

  • IRF8910TRPBF

    Dual N-Channel 20 V 2 W 7.4 nC Power Mosfet Surface Mount - SOIC-8

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd