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IPD053N08N3GATMA1 Image

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Mfr. #:
IPD053N08N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, IPD053N08N3 G series, MOSFET, NMOS, TO-252 package
Datasheet:
In Stock:
2500
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 90 A
Maximum drain-source voltage 80 V
Package type TO-252
Maximum drain-source resistance 9.5 mΩ
Mounting type Surface mount
Number of pins 3
Maximum gate-source voltage 20 V
Channel mode Enhancement
Maximum gate threshold voltage 3.5 V
Minimum gate threshold voltage 2 V
Maximum power dissipation 150 W
Transistor configuration Single
Category -
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