LOGO
LOGO
IRF7389TRPBF Image

img for reference only

Mfr. #:
IRF7389TRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, HEXFET series, MOSFET, N/PMOS, SOIC package
Datasheet:
In Stock:
20
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N, P
Maximum continuous drain current 5.3 A, 7.3 A
Maximum drain-source voltage 30 V
Package type SOIC
Maximum drain-source resistance 46 mΩ, 98 mΩ
Mounting type Surface mount
Number of pins 8
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage 1 V
Minimum gate threshold voltage 1 V
Maximum power dissipation 2.5 W
Transistor configuration Isolated
Category -
Related models
  • BAS 125-06W E6327

    Diode array 1 pair common anode Schottky 25 V 100mA (DC) surface mount type SC-70, SOT-323

  • BAS12507WE6327HTSA1

    Diode Array 2 pcs Independent Schottky 25 V 100mA (DC) Surface Mount Type SC-82A, SOT-343

  • BAS 16-07L4 E6327

    Diode Array 2 Standalone Standard 80 V 200mA (DC) Surface Mount 4-XFDFN

  • DD500S65K3NOSA1

    Diode Array 2 independent standard 6500 V chassis mounted modules

  • DD800S33K2CNOSA1

    Diode Array 2 Freestanding Standard 3300 V Chassis Mount Modules

  • DD600S65K3NOSA1

    Diode Array 2 independent standard 6500 V chassis mounted modules

  • DD750S65K3NOSA1

    Diode Array 2 independent standard 6500 V chassis mounted modules

  • DD1200S45KL3B5NOSA1

    Diode Array 2 independent standard 4500 V chassis mounted modules

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd