IRF630NPBF Infineon | Infineon agency

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Mfr. #：

IRF630NPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Infineon, HEXFET series, MOSFET, NMOS, TO-220AB package

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Channel type	N
Maximum continuous drain current	9.3 A
Maximum drain-source voltage	200 V
Package type	TO-220AB
Maximum drain-source resistance	300 mΩ
Mounting type	Through hole
Number of pins	3
Maximum gate-source voltage	-20 V, 20 V
Channel mode	Enhancement
Maximum gate threshold voltage	4 V
Minimum gate threshold voltage	2 V
Maximum power dissipation	82 W
Transistor configuration	Single
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