AUIRF1324WL Infineon | Infineon agency

img for reference only

Mfr. #：

AUIRF1324WL

Mfr.:

Infineon Technologies

Batch:

23+

Description:

International Rectifier, MOSFET, NMOS, TO-262WL package

Datasheet:

In Stock:

999999

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Channel type	N
Maximum continuous drain current	382 A
Maximum drain-source voltage	24 V
Package type	TO-262WL
Maximum drain-source resistance	1.3 mΩ
Mounting type	Through hole
Number of pins	3
Maximum gate-source voltage	-20 V, 20 V
Channel mode	Enhancement
Maximum gate threshold voltage	-
Minimum gate threshold voltage	-
Maximum power dissipation	300 W
Transistor configuration	-
Category	-

BSP125H6433XTMA1

Power MOSFET, N-Channel, 600 V, 120 mA, 25 ohm, SOT-223, Surface Mount
IRFS4115TRLPBF

Power MOSFET, N-Channel, 150 V, 195 A, 0.0103 ohm, TO-263AB, Surface Mount
IRLS3034TRL7PP

Power MOSFET, N-Channel, 40 V, 240 A, 0.001 ohm, TO-263 (D2PAK), Surface Mount
IRF9388TRPBF

Power MOSFET, P-Channel, 30 V, 12 A, 0.0085 ohm, SOIC, Surface Mount
IRFL024ZTRPBF

Power MOSFET, N-Channel, 55 V, 5.1 A, 0.0462 ohm, SOT-223, Surface Mount
AUIRFS8409-7P

Power MOSFET, N-channel, 40 V, 240 A, 550 μohm, TO-263 (D2PAK), Surface mount
IPB320N20N3GATMA1

Power MOSFET, N-Channel, 200 V, 34 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount
IRFB7430PBF

Power MOSFET, N-Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole