IPD60R800CEAUMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPD60R800CEAUMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Infineon, CoolMOS CE series, MOSFET, NMOS, DPAK (TO-252) package

Datasheet:

In Stock:

2500

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Channel type	N
Maximum continuous drain current	8.4 A
Maximum drain-source voltage	650 V
Package type	DPAK (TO-252)
Maximum drain-source resistance	800 mΩ
Mounting type	Surface mount
Number of pins	3
Maximum gate-source voltage	-30 V, 30 V
Channel mode	Enhancement
Maximum gate threshold voltage	3.5 V
Minimum gate threshold voltage	2.5 V
Maximum power dissipation	74 W
Transistor configuration	-
Category	-

S29AL016J70BFI010

Flash, Parallel NOR, 16 Mbit, 2M x 8bit, CFI, Parallel, FBGA, 48 pins
CY62167EV30LL-45ZXA

SRAM, MoBL?, Asynchronous SRAM, 16 Mbit, 2M x 8 bits/ 1M x 16 bits, TSOP-I, 48 pins, 2.2 V
S29GL128P90TFIR20

Flash, Parallel NOR, 128 Mbit, 16M x 8bit/ 8M x 16bit, CFI, TSOP, 56 pins
S29GL01GS11DHI020

Flash, NOR, Parallel NOR, 1 Gbit, 64M x 16 bits, Parallel port, FBGA, 64 pins
CY62168EV30LL-45BVXI

SRAM, Asynchronous SRAM, 16 Mbit, 2M x 8bit, VFBGA, 48 pins, 3.6 V
CY7C1472BV33-167AXI

SRAM, NoBL? Architecture, Pipeline SRAM, 72 Mbit, 4M x 18 bits, TQFP, 100 pins, 3.135 V
CY14B108N-BA25XI

Non-Volatile SRAM (NVSRAM), 8Mbit, 512K x 16 bits, 25ns Read/Write, Parallel, 2.7V to 3.6V, FBGA-48
S29GL256P11TFI020

Flash, MirrorBit Architecture, Parallel NOR, 256 Mbit, 32M x 8 bits, CFI, Parallel, TSOP, 56 pins