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IPD25CN10NGATMA1 Image

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Mfr. #:
IPD25CN10NGATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, IPD25CN10N G series, MOSFET, NMOS, DPAK (TO-252) package
Datasheet:
In Stock:
2500
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 35 A
Maximum drain-source voltage 100 V
Package type DPAK (TO-252)
Maximum drain-source resistance 26 mΩ
Mounting type Surface mount
Number of pins 3
Maximum gate-source voltage 20 V
Channel mode Enhancement
Maximum gate threshold voltage 4 V
Minimum gate threshold voltage 2 V
Maximum power dissipation 71 W
Transistor configuration Single
Category -
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