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IPB120N06S4H1ATMA2 Image

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Mfr. #:
IPB120N06S4H1ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, OptiMOS?-T2 series, MOSFET, NMOS, D2PAK (TO-263) package
Datasheet:
In Stock:
5
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 120 A
Maximum drain-source voltage 60 V
Package type D2PAK (TO-263)
Maximum drain-source resistance 0.002. Ω
Mounting type Through hole
Number of pins 3
Maximum gate-source voltage -
Channel mode Enhancement
Maximum gate threshold voltage 4 V
Minimum gate threshold voltage -
Maximum power dissipation -
Transistor configuration -
Category -
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