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IPB180N06S4H1ATMA2 Image

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Mfr. #:
IPB180N06S4H1ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, OptiMOS T2 series, MOSFET, NMOS, D2PAK (TO-263) package
Datasheet:
In Stock:
2
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 180 A
Maximum drain-source voltage 60 V
Package type D2PAK (TO-263)
Maximum drain-source resistance 1.7 mΩ
Mounting type Surface mount
Number of pins 7
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage 4 V
Minimum gate threshold voltage 2 V
Maximum power dissipation 250 W
Transistor configuration Single
Category -
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