IPB180N06S4H1ATMA2 Infineon | Infineon agency

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Mfr. #：

IPB180N06S4H1ATMA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Infineon, OptiMOS T2 series, MOSFET, NMOS, D2PAK (TO-263) package

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Channel type	N
Maximum continuous drain current	180 A
Maximum drain-source voltage	60 V
Package type	D2PAK (TO-263)
Maximum drain-source resistance	1.7 mΩ
Mounting type	Surface mount
Number of pins	7
Maximum gate-source voltage	-20 V, 20 V
Channel mode	Enhancement
Maximum gate threshold voltage	4 V
Minimum gate threshold voltage	2 V
Maximum power dissipation	250 W
Transistor configuration	Single
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