LOGO
LOGO
IMZA65R057M1HXKSA1 Image

img for reference only

Mfr. #:
IMZA65R057M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon, CoolSiC series, MOSFET, NMOS, TO-247-4 package
Datasheet:
In Stock:
1
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 35 A
Maximum drain-source voltage 650 V
Package type TO-247-4
Maximum drain-source resistance 0.074 Ω
Mounting type Through hole
Number of pins 4
Maximum gate-source voltage -
Channel mode Enhancement
Maximum gate threshold voltage 5.7 V
Minimum gate threshold voltage -
Maximum power dissipation -
Transistor configuration -
Category -
Related models
  • CY22393FXI

    PLL Clock Generator, 166MHZ, -40 to 85DEGC

  • BCR503E6327HTSA1

    Transistor Bipolar Prebiased/Digital, Single NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm

  • IM66D130AXTMA1

    XENSIV - IM66D130A high performance digital MEMS microphone

  • EVALISSI30R12HTOBO1

    Evaluation Board, iSSI30R12H, Coreless Transformer Advanced Solid State Isolator, Isolator

  • IM69D127V11XTMA1

    IM69D Series 20 Hz ~ 20 kHz Digital 69dB Rectangular MEMS Microphone

  • KP264XTMA1

    XENSIV? digital barometric air pressure sensor with SPI interface

  • PASCO2V01BUMA1

    XENSIV PAS CO2 sensor A revolutionary CO2 sensor based on photoacoustic spectroscopy

  • TLE49663KHTSA1

    Hall-effect Position Sensor, 2.7V to 24V; TSOP-6 package

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd