LOGO
LOGO
ESD5V3U2U03LRHE6327XTMA1 Image

img for reference only

Mfr. #:
ESD5V3U2U03LRHE6327XTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon unidirectional ESD protection diode, maximum clamping voltage 28V, SMD mounting, TSLP package, minimum breakdown voltage 6V
Datasheet:
In Stock:
25
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Diode configuration Common anode
Direction type Unidirectional
Maximum clamping voltage 28V
Minimum breakdown voltage 6V
Mounting type Surface mount
Package type TSLP
Maximum reverse standby voltage -
Number of pins 3
Peak pulse power dissipation -
Maximum peak pulse current 3A
ESD protection Yes
Number of components per chip 2
Minimum operating temperature -40 °C
Dimensions 1 x 0.6 x 0.34mm
Related models
  • IPP050N10NF2SAKMA1

    Power MOSFET, N-Channel, 100 V, 110 A, 0.0045 ohm, TO-220, Through Hole

  • IAUS300N08S5N012TATMA1

    Power MOSFET, N-Channel, 80 V, 300 A, 0.001 ohm, HDSOP, Surface Mount

  • IPS60R210PFD7SAKMA1

    Power MOSFET, N-Channel, 600 V, 16 A, 0.171 ohm, TO-251 (IPAK), Through Hole

  • IPN60R2K0PFD7SATMA1

    Power MOSFET, N-Channel, 600 V, 3 A, 1.626 ohm, SOT-223, Surface Mount

  • IPP200N25N3GXKSA1

    Power MOSFET, N-Channel, 250 V, 64 A, 0.0175 ohm, TO-220, Through Hole

  • IRFU3607PBF

    Power MOSFET, N-Channel, 75 V, 56 A, 0.00734 ohm, TO-251AA, Through Hole

  • IPA60R160P7XKSA1

    Power MOSFET, N-Channel, 600 V, 20 A, 0.12 ohm, TO-220FP, Through Hole

  • IAUC120N04S6L009ATMA1

    Power MOSFET, N-Channel, 40 V, 120 A, 0.00078 ohm, TDSON, SMT

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd