IPD650P06NMSAUMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPD650P06NMSAUMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount type P channel 60 V 22A (Tc) 83W (Tc) PG-TO252-3-313

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
	Tape and Reel (TR)
	On Sale
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	22A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	65 mOhm @ 22A, 10V
Vgs(th) (max) at Id	4V @ 1.04mA
Gate Charge?(Qg) (max) at Vgs	39 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	1600 pF @ 30 V
FET function	-
Power dissipation (max)	83W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3-313
Package/case	TO-252-3, DPak (2-lead tab), SC-63
	IPD650

S29AL016J70BFI010

Flash, Parallel NOR, 16 Mbit, 2M x 8bit, CFI, Parallel, FBGA, 48 pins
CY62167EV30LL-45ZXA

SRAM, MoBL?, Asynchronous SRAM, 16 Mbit, 2M x 8 bits/ 1M x 16 bits, TSOP-I, 48 pins, 2.2 V
S29GL128P90TFIR20

Flash, Parallel NOR, 128 Mbit, 16M x 8bit/ 8M x 16bit, CFI, TSOP, 56 pins
S29GL01GS11DHI020

Flash, NOR, Parallel NOR, 1 Gbit, 64M x 16 bits, Parallel port, FBGA, 64 pins
CY62168EV30LL-45BVXI

SRAM, Asynchronous SRAM, 16 Mbit, 2M x 8bit, VFBGA, 48 pins, 3.6 V
CY7C1472BV33-167AXI

SRAM, NoBL? Architecture, Pipeline SRAM, 72 Mbit, 4M x 18 bits, TQFP, 100 pins, 3.135 V
CY14B108N-BA25XI

Non-Volatile SRAM (NVSRAM), 8Mbit, 512K x 16 bits, 25ns Read/Write, Parallel, 2.7V to 3.6V, FBGA-48
S29GL256P11TFI020

Flash, MirrorBit Architecture, Parallel NOR, 256 Mbit, 32M x 8 bits, CFI, Parallel, TSOP, 56 pins