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IRFB11N50APBF Image

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Mfr. #:
IRFB11N50APBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 500 V 11A (Tc) 170W (Tc) TO-220AB
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Tubes
Discontinued
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 11A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 520 mOhm @ 6.6A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 52 nC @ 10 V
Vgs (max) ±30V
Input capacitance (Ciss) (max) 1423 pF @ 25 V
FET function -
Power dissipation (max) 170W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package TO-220AB
Package/case TO-220-3
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