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IPS65R650CEAKMA1 Image

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Mfr. #:
IPS65R650CEAKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 700 V 10.1A (Tc) 86W (Tc) PG-TO251-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 700 V
Current at 25°C - Continuous Drain (Id) 10.1A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 650 mOhm @ 2.1A, 10V
Vgs(th) (max) at Id 3.5V @ 210μA
Gate Charge (Qg) (max) at Vgs 23 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 440 pF @ 100 V
FET Function -
Power Dissipation (max) 86W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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