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IPB65R190C7ATMA1 Image

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Mfr. #:
IPB65R190C7ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 13A (Tc) 72W (Tc) PG-TO263-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? C7
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 13A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 190 mOhm @ 5.7A, 10V
Vgs(th) (max) at Id 4V @ 290μA
Gate Charge?(Qg) (max) at Vgs 23 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 1150 pF @ 400 V
FET Function -
Power Dissipation (max) 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
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