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IPP70N12S3L12AKSA1 Image

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Mfr. #:
IPP70N12S3L12AKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 120 V 70A (Tc) 125W (Tc) PG-TO220-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?
Package Dip
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 120 V
Current at 25°C - Continuous Drain (Id) 70A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 12.1 mOhm @ 70A, 10V
Vgs(th) (max) at Id 2.4V @ 83μA
Gate Charge?(Qg) (max) at Vgs 77 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 5550 pF @ 25 V
FET function -
Power dissipation (max) 125W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-3-1
Package/case TO-220-3
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