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IPI45N06S4L08AKSA3 Image

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Mfr. #:
IPI45N06S4L08AKSA3
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 45A (Tc) 71W (Tc) PG-TO262-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?
Package Dip
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 45A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 8.2 mOhm @ 45A, 10V
Vgs(th) (max) at Id 2.2V @ 35μA
Gate Charge?(Qg) (max) at Vgs 64 nC @ 10 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 4780 pF @ 25 V
FET function -
Power dissipation (max) 71W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO262-3-1
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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