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IPU80R1K4CEAKMA1 Image

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Mfr. #:
IPU80R1K4CEAKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 800 V 3.9A (Tc) 63W (Tc) PG-TO251-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 800 V
Current at 25°C - Continuous Drain (Id) 3.9A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 1.4 ohms @ 2.3A, 10V
Vgs(th) (max) at Id 3.9V @ 240μA
Gate Charge?(Qg) (max) at Vgs 23 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 570 pF @ 100 V
FET Function -
Power Dissipation (max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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