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IRF40H210 Image

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Mfr. #:
IRF40H210
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 40 V 100A (Tc) 125W (Tc) 8-PQFN (5x6)
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?, StrongIRFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 100A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 1.7 milliohms @ 100A, 10V
Vgs(th) (max) at Id 3.7V @ 150μA
Gate Charge?(Qg) (max) at Vgs 152 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 5406 pF @ 25 V
FET function -
Power dissipation (max) 125W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package 8-PQFN (5x6)
Package/case 8-PowerVDFN
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