IPI120N06S4H1AKSA2 Infineon | Infineon agency

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Mfr. #：

IPI120N06S4H1AKSA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 60 V 120A (Tc) 250W (Tc) PG-TO262-3-1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS?
Package	Dip
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	120A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	2.4 milliohms @ 100A, 10V
Vgs(th) (max) at Id	4V @ 200μA
Gate Charge?(Qg) (max) at Vgs	270 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	21900 pF @ 25 V
FET function	-
Power dissipation (max)	250W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO262-3-1
Package/case	TO-262-3, long lead, I2Pak, TO-262AA

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