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IPI80N06S4L05AKSA2 Image

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Mfr. #:
IPI80N06S4L05AKSA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 80A (Tc) 107W (Tc) PG-TO262-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?
Package Dip
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 80A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 8.5 milliohms @ 40A, 4.5V
Vgs(th) (max) at Id 2.2V @ 60μA
Gate Charge?(Qg) (max) at Vgs 110 nC @ 10 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 8180 pF @ 25 V
FET function -
Power dissipation (max) 107W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO262-3-1
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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