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IPI70R950CEXKSA1 Image

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Mfr. #:
IPI70R950CEXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 700 V 7.4A (Tc) 68W (Tc) PG-TO262-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CE
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 700 V
Current at 25°C - Continuous Drain (Id) 7.4A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 950 mOhm @ 1.5A, 10V
Vgs(th) (max) at Id 3.5V @ 150μA
Gate Charge?(Qg) (max) at Vgs 15.3 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 328 pF @ 100 V
FET function -
Power dissipation (max) 68W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO262-3-1
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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