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IPS031N03LGAKMA1 Image

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Mfr. #:
IPS031N03LGAKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 30 V 90A (Tc) 94W (Tc) PG-TO251-3-11
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 3
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 90 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 3.1 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id 2.2 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 51 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 5300 pF @ 15 V
FET Function -
Power Dissipation (max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-11
Package/Case TO-251-3 Stub Leads, IPak
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