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AUIRFSL6535 Image

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Mfr. #:
AUIRFSL6535
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 300 V 19A (Tc) 210W (Tc) PG-TO262-3-901
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 300 V
Current at 25°C - Continuous Drain (Id) 19A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 185 mOhm @ 11A, 10V
Vgs(th) (max) at Id 5V @ 150μA
Gate Charge?(Qg) (max) at Vgs 57 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 2340 pF @ 25 V
FET function -
Power dissipation (max) 210W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO262-3-901
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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