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IPP037N06L3GHKSA1 Image

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Mfr. #:
IPP037N06L3GHKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 90A (Tc) 167W (Tc) PG-TO220-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 3
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 90 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 3.7 mOhm @ 90 A, 10 V
Vgs(th) (max) at Id 2.2 V @ 93 μA
Gate Charge?(Qg) (max) at Vgs 79 nC @ 4.5 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 13000 pF @ 30 V
FET Function -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package/Case TO-220-3
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