IPU60R1K4C6BKMA1 Infineon | Infineon agency

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Mfr. #：

IPU60R1K4C6BKMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 600 V 3.2A (Tc) 28.4W (Tc) PG-TO251-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Package	Bulk
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	3.2A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	1.4 ohms @ 1.1A, 10V
Vgs(th) (max) at Id	3.5V @ 90μA
Gate Charge?(Qg) (max) at Vgs	9.4 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	200 pF @ 100 V
FET Function	Super Junction
Power Dissipation (max)	28.4W (Tc)
Operating Temperature	-55°C ~ 155°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

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