IPI80P04P4L08AKSA1 Infineon | Infineon agency

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Mfr. #：

IPI80P04P4L08AKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole P channel 40 V 80A (Tc) 75W (Tc) PG-TO262-3-1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS?
Package	Dip
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at Id, Vgs	8.2 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id	2.2 V @ 120 μA
Gate Charge (Qg) (max) at Vgs	92 nC @ 10 V
Vgs (max)	5V, -16V
Input capacitance (Ciss) (max) at different Vds	5430 pF @ 25 V
FET function	-
Power dissipation (max)	75W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO262-3-1
Package/case	TO-262-3, long lead, I2Pak, TO-262AA

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