LOGO
LOGO
IPL65R420E6AUMA1 Image

img for reference only

Mfr. #:
IPL65R420E6AUMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 650 V 10.1A (Tc) 83W (Tc) PG-VSON-4
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? E6
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 10.1A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 420 mOhm @ 3.4A, 10V
Vgs(th) (max) at Id 3.5V @ 300μA
Gate Charge?(Qg) (max) at Vgs 39 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 710 pF @ 100 V
FET function -
Power dissipation (max) 83W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-VSON-4
Package/case 4-PowerTSFN
Related models
  • IRS2509C

    Gate Driver IC

  • IRS2509CD

    Gate Driver IC

  • IRS26320C

    Gate Driver IC

  • IRS26320JPBF

    Half-bridge Gate Driver IC Non-Inverting 44-PLCC

  • IRG7T200HF12B

    IGBT Module Half Bridge 1200 V 400 A 1060 W Base Mount POWIR? 62

  • IRG7T300CH12B

    IGBT module single channel 1200 V 570 A 1600 W base mounted POWIR? 62

  • IRG7T300CL12B

    IGBT module single channel 1200 V 570 A 1600 W base mounted POWIR? 62

  • IRG7T300HF12B

    IGBT Module Half Bridge 1200 V 570 A 1600 W Base Mount POWIR? 62

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd