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IPP65R660CFDAAKSA1 Image

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Mfr. #:
IPP65R660CFDAAKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 6A (Tc) 62.5W (Tc) PG-TO220-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 660 mOhm @ 3.2A, 10V
Vgs(th) (max) at Id 4.5V @ 200μA
Gate Charge?(Qg) (max) at Vgs 20 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 543 pF @ 100 V
FET function -
Power dissipation (max) 62.5W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-3
Package/case TO-220-3
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