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IPP80P04P4L06AKSA1 Image

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Mfr. #:
IPP80P04P4L06AKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole P channel 40 V 80A (Tc) 88W (Tc) PG-TO220-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?
Package Dip
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 6.7 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id 2.2 V @ 150 μA
Gate Charge (Qg) (max) at Vgs 104 nC @ 10 V
Vgs (max) 5V, -16V
Input capacitance (Ciss) (max) at different Vds 6580 pF @ 25 V
FET function -
Power dissipation (max) 88W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-3-1
Package/case TO-220-3
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