IPS65R600E6AKMA1 Infineon | Infineon agency

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Mfr. #：

IPS65R600E6AKMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 650 V 7.3A (Tc) 63W (Tc) PG-TO251-3-11

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? E6
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	7.3A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	600 mOhm @ 2.1A, 10V
Vgs(th) (max) at Id	3.5V @ 210μA
Gate Charge?(Qg) (max) at Vgs	23 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	440 pF @ 100 V
FET Function	-
Power Dissipation (max)	63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3-11
Package/Case	TO-251-3 Stub Leads, IPak

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