LOGO
LOGO
IPW65R190CFDAFKSA1 Image

img for reference only

Mfr. #:
IPW65R190CFDAFKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through Hole N Channel 650 V 17.5A (Tc) 151W (Tc) PG-TO247-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 17.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 190 mOhm @ 7.3A, 10V
Vgs(th) (max) at Id 4.5V @ 700μA
Gate Charge?(Qg) (max) at Vgs 68 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1850 pF @ 100 V
FET function -
Power dissipation (max) 151W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3
Package/case TO-247-3
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd