IPZ60R041P6FKSA1 Infineon | Infineon agency

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Mfr. #：

IPZ60R041P6FKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 600 V 77.5A (Tc) 481W (Tc) PG-TO247-4

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? P6
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	77.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	41 milliohms @ 35.5A, 10V
Vgs(th) (max) at Id	4.5V @ 2.96mA
Gate Charge?(Qg) (max) at Vgs	170 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	8180 pF @ 100 V
FET function	-
Power dissipation (max)	481W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO247-4
Package/case	TO-247-4

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