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BSP299H6327XUSA1 Image

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Mfr. #:
BSP299H6327XUSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 500 V 400mA (Ta) 1.8W (Ta) PG-SOT223-4
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 400 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) for different Id, Vgs 4 ohms @ 400 mA, 10 V
Vgs(th) (max) for different Id 4 V @ 1 mA
Vgs (max) ±20 V
Input Capacitance (Ciss) (max) for different Vds 400 pF @ 25 V
FET Function -
Power dissipation (max) 1.8W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount type
Supplier device package PG-SOT223-4
Package/case TO-261-4, TO-261AA
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