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IPI70P04P409AKSA1 Image

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Mfr. #:
IPI70P04P409AKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 40 V 72A (Tc) 75W (Tc) PG-TO262-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?
Package Dip
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 72A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 9.4 mOhm @ 70A, 10V
Vgs(th) (max) at Id 4V @ 120μA
Gate Charge?(Qg) (max) at Vgs 70 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 4810 pF @ 25 V
FET function -
Power dissipation (max) 75W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO262-3-1
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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