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IPAW60R280CEXKSA1 Image

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Mfr. #:
IPAW60R280CEXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 600 V 19.3A (Tc) 32W (Tc) PG-TO220 Full package, wide creepage distance
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 19.3A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 280 mOhm @ 6.5A, 10V
Vgs(th) (max) at Id 3.5V @ 430μA
Gate Charge?(Qg) (max) at Vgs 43 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 950 pF @ 100 V
FET Function Super Junction
Power Dissipation (max) 32W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Encapsulation, Wide Creepage Distance
Package/Case TO-220-3 Full Encapsulation, Variant
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