LOGO
LOGO
IRL60S216 Image

img for reference only

Mfr. #:
IRL60S216
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 60 V 195A (Tc) 375W (Tc) PG-TO263-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?, StrongIRFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 195A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 1.95 milliohms @ 100A, 10V
Vgs(th) (max) at Id 2.4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 255 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 15330 pF @ 25 V
FET function -
Power dissipation (max) 375W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO263-3
Package/case TO-263-3, D2Pak (2-lead tab), TO-263AB
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd