LOGO
LOGO
IKW75N60H3FKSA1 Image

img for reference only

Mfr. #:
IKW75N60H3FKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: IGBT; 600V; 75A; 428W; TO247-3; single transistor
Datasheet:
In Stock:
38
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type IGBT
Technology TRENCHSTOP?
Collector-emitter voltage 600V
Collector current 75A
Power consumption 428W
Package TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 225A
Mounting method THT
Gate charge 470nC
Packaging type Tube
Turn-on time 85ns
Turn-off time 332ns
Semiconductor structure Single transistor
Semiconductor device characteristics Integrated anti-parallel diode
Related models
  • IPB80N04S404ATMA1

    Surface mount N channel 40 V 80A (Tc) 71W (Tc) PG-TO263-3-2

  • IRFU3910PBF

    Through hole N channel 100 V 16A (Tc) 79W (Tc) IPAK (TO-251AA)

  • BSO130P03SHXUMA1

    Surface mount type P channel 30 V 9.2A (Ta) 1.56W (Ta) PG-DSO-8

  • IPD90N04S404ATMA1

    Surface mount N channel 40 V 90A (Tc) 71W (Tc) PG-TO252-3-313

  • IPD90N04S4L04ATMA1

    Surface mount N channel 40 V 90A (Tc) 71W (Tc) PG-TO252-3-313

  • BSZ040N04LSGATMA1

    Surface mount N-channel 40 V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) PG-TSDSON-8

  • IPB090N06N3GATMA1

    Surface mount N channel 60 V 50A (Tc) 71W (Tc) PG-TO263-3

  • IPD80R1K2P7ATMA1

    Surface mount N channel 800 V 4.5A (Tc) 37W (Tc) PG-TO252-3

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd