IPD65R650CEATMA1 Infineon | Infineon agency

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Mfr. #：

IPD65R650CEATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 650 V 10.1A (Tc) 86W (Tc) PG-TO252-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	10.1A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	650 mOhm @ 2.1A, 10V
Vgs(th) (max) at Id	3.5V @ 0.21mA
Gate Charge?(Qg) (max) at Vgs	23 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	440 pF @ 100 V
FET function	Super junction
Power dissipation (max)	86W (Tc)
Operating temperature	-40°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3
Package/case	TO-252-3, DPak (2-lead tab), SC-63

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