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IPI120N10S403AKSA1 Image

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Mfr. #:
IPI120N10S403AKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 100 V 120A (Tc) 250W (Tc) PG-TO262-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?
Package Dip
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 120A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 3.9 mOhm @ 100A, 10V
Vgs(th) (max) at Id 3.5V @ 180μA
Gate Charge?(Qg) (max) at Vgs 140 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 10120 pF @ 25 V
FET function -
Power dissipation (max) 250W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO262-3-1
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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