IRL40B212 Infineon | Infineon agency

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Mfr. #：

IRL40B212

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 40 V 195A (Tc) 231W (Tc) TO-220AB

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?, StrongIRFET?
Packaging	Tube
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	195A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	1.9 milliohms @ 100A, 10V
Vgs(th) (max) at Id	2.4V @ 150μA
Gate Charge?(Qg) (max) at Vgs	137 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	8320 pF @ 25 V
FET function	-
Power dissipation (max)	231W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	TO-220AB
Package/case	TO-220-3

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