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IRL60B216 Image

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Mfr. #:
IRL60B216
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 195A (Tc) 375W (Tc) TO-220AB
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?, StrongIRFET?
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 195A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 1.9 milliohms @ 100A, 10V
Vgs(th) (max) at Id 2.4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 258 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 15570 pF @ 25 V
FET function -
Power dissipation (max) 375W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package TO-220AB
Package/case TO-220-3
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