LOGO
LOGO
FP50R12KT3BOSA1 Image

img for reference only

Mfr. #:
FP50R12KT3BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Modules: IGBT; diode/transistor; buck chopper, 3-phase diode bridge, IGBT 3-phase bridge, NTC thermistor
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Module type IGBT
Semiconductor structure Diode/transistor
Topology 3-phase diode bridge, buck chopper, IGBT 3-phase bridge, NTC thermistor
Off-state maximum voltage 1.2kV
Collector current 50A
Package AG-ECONO3-3
Application Inverter, converter
Electrical mounting Press-in PCB
Gate-emitter voltage ±20V
Pulsed collector current 100A
Power consumption 280W
Technology EconoPIM? 2
Mechanical mounting Threaded
Related models
  • IRF7907TRPBF

    Dual MOSFET, N-channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm

  • IRFR1018ETRPBF

    Power MOSFET, N-Channel, 60 V, 79 A, ​​0.0071 ohm, TO-252AA, Surface Mount

  • BSL308CH6327XTSA1

    Dual MOSFET, Complementary N and P channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.044 ohm

  • IRFH7932TRPBF

    Power MOSFET, HEXFET?, N-Channel, 30 V, 25 A, 0.0025 ohm, QFN, Surface Mount

  • IRF3808STRLPBF

    Power MOSFET, N-Channel, 75 V, 106 A, 0.0059 ohm, TO-263 (D2PAK), Surface Mount

  • IPD60R400CEAUMA1

    Power MOSFET, N-channel, 600 V, 14.7 A, 0.34 ohm, TO-252 (DPAK), Surface mount

  • IPU60R2K1CEAKMA1

    Power MOSFET, N-channel, 600 V, 3.7 A, 1.8 ohm, TO-251, Through Hole

  • IPB60R120P7ATMA1

    Power MOSFET, N-Channel, 600 V, 26 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd