LOGO
LOGO
IGB03N120H2ATMA1 Image

img for reference only

Mfr. #:
IGB03N120H2ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: IGBT; 1.2kV; 3.9A; 62.5W; D2PAK; single transistor
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type IGBT
Collector-emitter voltage 1.2kV
Collector current 3.9A
Power consumption 62.5W
Package D2PAK
Gate-emitter voltage ±20V
Pulsed collector current 9.9A
Mounting method SMD
Gate charge 22nC
Packaging type Reel, tape
Turn-on time 16.1ns
Turn-off time 403ns
Semiconductor structure Single transistor
Related models
  • IRFS3107TRL7PP

    IRFS3107 Series 75 V 2.6 mOhm Surface Mount HEXFET Power MOSFET - TO-263-7

  • IRFS3107TRLPBF

    Single N-Channel 75 V 3 mOhm 240 nC HEXFET? Power Mosfet - D2PAK

  • IRFS3206TRRPBF

    Single N-Channel 60 V 300 W 120 nC Power Mosfet Surface Mount - D2PAK-3

  • IRFS3207TRLPBF

    Single N-Channel 75 V 300 W 180 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

  • IRFS3306TRLPBF

    Single N-Channel 60 V 230 W 85 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

  • IRFS3307ZTRRPBF

    N-Channel 75V 5.8mΩ 79nC SMT HEXFET Power Mosfet - D2PAK

  • IRFS3607TRLPBF

    Single N-Channel 75 V 9 mOhm 84 nC 140 W Silicon SMT Mosfet - TO-263-3

  • IRFS4010TRL7PP

    Single N-Channel 100 V 4 mOhm 230 nC HEXFET? Power Mosfet - D2PAK

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd