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FF200R12KT3EHOSA1 Image

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Mfr. #:
FF200R12KT3EHOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Module: IGBT; Transistor/Transistor, common emitter; IGBT x2; Urmax: 1.2kV; AG-62MM-1; 1.05kW; Threaded
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Module type IGBT
Semiconductor structure Common emitter, transistor/transistor
Topology IGBT x2
Maximum off-state voltage 1.2kV
Collector current 200A
Package AG-62MM-1
Electrical mounting method FASTON connector, screw
Gate-emitter voltage ±20V
Pulsed collector current 400A
Power consumption 1.05kW
Mechanical mounting method Threaded
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